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题名: Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures
作者: Niu ZC;  Wang XD;  Miao ZH;  Feng SL
发表日期: 2001
摘要: Optical properties of InGaAs/GaAs self-organized quantum dots (QDs) structures covered by InxGa1-x As capping layers with different In contents chi ranging from 0. 0 (i.e., GaAs) to 0. 3 were investigated systematically by photoluminescence (PL) measurements. Red-shift of the PL peak energies of the InAs QDs covered by InxGa1-xAs layers with narrower linewidth and less shifts of the PL emissions via variations of the measurement temperatures were observed compared with that covered by GaAs layers. Calculation and structural measurements confirm that the red-shift of the PL peaks are mainly due to strain reduction and suppression of the In/Ga intermixing due to the InxGa1-xAs cover layer, leading to better size uniformity and thus narrowing the PL linewidth of the QDs. 1. 3 mum wavelength emission with very narrow linewidth of only 19. 2 meV at room temperature was successfully obtained from the In0.5Ga0.5As/GaAs QDs covered by the In0.2Ga0.8As layer.
KOS主题词: atomic layer deposition;  Optical properties;  emission;  Layer
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Niu ZC; Wang XD; Miao ZH; Feng SL .Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2001 ,20(1):20-24
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