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题名: Phonon-induced Raman scattering in GaNAs
作者: Jiang DS;  Sun BQ;  Tan PH;  Li LH;  Pan Z
发表日期: 2001
摘要: The Raman scattering spectra of MBE-grown GaNAs epilayers were investigated. The resonant enhancement of Raman scattering due to the E+ states in the conduction band was observed and the Raman peaks related to the phonons at non-Gamma points of the Brillouin Zone were detected. II was clearly seen that the local vibrational mode induced by nitrogen impurities evolves to the GaN-like lattice phonon mode when the nitrogen content increases. By comparing the Raman spectra measured before and after 850 degreesC rapid thermal annealing, it was tentatively suggested that two weak peaks were induced by the pairing or clustering effect of nitrogen.
KOS主题词: Raman effect;  Alloys
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Jiang DS; Sun BQ; Tan PH; Li LH; Pan Z .Phonon-induced Raman scattering in GaNAs ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2001 ,20(1):11-14
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