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题名: Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy
作者: Jiang WH;  Xu HZ;  Xu B;  Zhou W;  Gong Q;  Ding D;  Liang JB;  Wang ZG
发表日期: 2001
摘要: A systematic study of self-organized In0.5Ga0.5As quantum dots (QDs) and islands grown by molecular beam epitaxy on (100) and (n11) A/B GaAs substrates is given, where n varies from 1 to 5. Low-temperature photoluminescence results show that the properties of the dots have a strong dependence on the substrate orientation as revealed by atomic force microscopy, consistent with the differences in size, shape, and distribution of QDs on different substrates. From (100) to (111) surface, the photoluminescence peak position of dots on B surfaces is found to blueshift more than that on A surfaces. QDs are also formed on (511) A surface. The positional distribution of these dots exhibits a wavy shape, which is related to the corrugated structure of this surface. Two kinds of islands are formed on (111) A surface, but further work is needed to explain the mechanism of these islands. (C) 2001 American Vacuum Society.
KOS主题词: Surfaces;  Temperature;  rough surfaces;  strain;  Lasers
刊名: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Jiang WH; Xu HZ; Xu B; Zhou W; Gong Q; Ding D; Liang JB; Wang ZG .Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2001 ,19(1):197-201
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