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题名: Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands
作者: Wang XD;  Niu ZC;  Feng SL;  Miao ZH
发表日期: 2001
摘要: We report the effect of InchiGa1-chiAs (0 less than or equal to chi less than or equal to0.4) capping layer on photoluminescence (PL) properties of 1.3 mum wavelength self-assembled InAs quantum islands, which are formed via depositing 3.5 monolayers (ML) InAs on GaAs (1 0 0) substrate by molecular beam epitaxy (MBE). Compared with the InchiGa1-chiAs capping layer containing a larger In mole fraction chi greater than or equal to0.2 and the GaAs capping layer (chi = 0), the InAs islands covered by the In0.1Ga0.9As layer show PL with lower emission energy, narrower full-width at half-maximum (FWHM), and quite stronger intensity. The PL peak energy and FWHM become more temperature dependent with the increase of In content in the InchiGa1-chiAs capping layer (chi greater than or equal to0.2), while the InAs islands covered by the In0.1Ga0.9As layer is much less temperature sensitive. In addition, the InAs islands covered by the In0.1Ga0.9As capping layer show room temperature PL wavelength at about 1.3 mum. (C) 2001 Published by Elsevier Science B.V.
KOS主题词: Atomic force microscopy;  Microscopy;  atomic layer deposition;  Nanostructured materials;  Semiconductor lasers;  temperature dependence;  Gallium arsenide;  emission;  Water-power;  Force and energy;  Lasers
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang XD; Niu ZC; Feng SL; Miao ZH .Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands ,JOURNAL OF CRYSTAL GROWTH,2001 ,223(3):363-368
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