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题名: Structural characterization of cubic GaN grown on GaAs(001) substrates
作者: Zheng XH;  Qu B;  Wang YT;  Yang H;  Liang JW;  Han JY
发表日期: 2001
摘要: Structural characteristics of cubic GaN epilayers grown on GaAs(001) were studied using X-ray double-crystal diffraction technique. The structure factors of cubic GaN(002) and (004) components are approximately identical. However, the integrated intensities of the rocking curve for cubic (002) components are over five times as those of (004) components. The discrepancy has been interpreted in detail considering other factors. In the conventional double crystal rocking curve, the peak broadening includes such information caused by the orientation distribution (mosaicity) and the distribution of lattice spacing. These two kinds of distributions can be distinguished by the triple-axis diffraction in which an analyser crystal is placed in front of the detector. Moreover, the peak broadening was analysed by reciprocal lattice construction and Eward sphere. By using triple-axis diffraction of cubic (002) and (113) components, domain size and dislocation density were estimated. The fully relaxed lattice parameter of cubic GaN was determined to be about 0.451 +/- 0.001nm.
KOS主题词: continuous-wave operation;  Epitaxy;  Semiconductor lasers;  Thin films;  atomic layer deposition
刊名: CHINESE JOURNAL OF ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zheng XH; Qu B; Wang YT; Yang H; Liang JW; Han JY .Structural characterization of cubic GaN grown on GaAs(001) substrates ,CHINESE JOURNAL OF ELECTRONICS,2001 ,10(2):219-222
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