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题名: Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition
作者: Fu Y;  Yang H;  Zhao DG;  Zheng XH;  Li SF;  Sun YP;  Feng ZH;  Wang YT;  Duan LH
发表日期: 2001
摘要: The epitaxial lateral overgrowth (ELO) of cubic GaN by metalorganic chemical vapor deposition has been performed on SiO2-patterned GaN laver. The mechanism of lateral overgrowth is studied It was found that the morphology of ELO GaN stripes strongly depended on the direction of stripe window openings, which was discussed based on the different growth rates of (1 1 1)A and (1 1 1)B. Under the optimized growth condition, single-phase cubic GaN was deposited successfully. The peak position of near-band emission in ELO GaN has a redshift of 13 meV compared with the conventionally grown sample, which may be due to the partial release of stress during the ELO process. (C) 2001 Published by Elsevier Science B.V.
KOS主题词: Photoluminescence;  Scanning electron microscopy;  Metal organic chemical vapor deposition;  Semiconductor lasers;  Layers
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Fu Y; Yang H; Zhao DG; Zheng XH; Li SF; Sun YP; Feng ZH; Wang YT; Duan LH .Epitaxial lateral overgrowth of cubic GaN by metalorganic chemical vapor deposition ,JOURNAL OF CRYSTAL GROWTH,2001 ,225(1):45-49
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