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题名: Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique
作者: Liu B;  Li Q;  Xu ZY;  Ge WK
发表日期: 2001
摘要: By analysing the carrier dynamics based on the rate equations and the change of the refractive index due to the efficient carrier capture, we have calculated the carrier capture process in the InAs/GaAs system detected by a simple degenerate pump-probe technique. The calculated results are found to be in good agreement with the experimental findings. Our results indicate that this simple technique, with the clear advantage of being easy to carry out, can be very useful in studying the carrier dynamics for some specific structures such as InAs ultrathin layers embedded in a GaAs matrix described here.
KOS主题词: Quantum dots;  Gallium arsenide;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis;  Relaxation
刊名: JOURNAL OF PHYSICS-CONDENSED MATTER
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu B; Li Q; Xu ZY; Ge WK .Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique ,JOURNAL OF PHYSICS-CONDENSED MATTER,2001 ,13(18):3923-3930
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