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题名: High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy
作者: Pan Z;  Li LH;  Du Y;  Lin YW;  Wu RH
发表日期: 2001
摘要: GaInNAs/GaAs single-quantum-well (SQW) lasers have been grown by solid-source molecular beam epitaxy. N is introduced by a home-made de-active plasma source. Incorporation of N into InGaAs decreases the bandgap significantly. The highest N concentration of 2.6% in a GaInNAs/GaAs QW is obtained, corresponding to the photoluminescence (PL) peak wavelength of 1.57 mum at 10 K. The PL peak intensity decreases rapidly and the PL full width at half maximum increases with the increasing N concentrations. Rapid thermal annealing at 850 degrees C could significantly improve the crystal quality of the QWs. An optimum annealing time of 5s at 850 degrees C was obtained. The GalnNAs/GaAs SQW laser emitting at 1.2 mum exhibits a high characteristic temperature of 115 K in the temperature range of 20 degrees C- 75 degrees C.
KOS主题词: Operation;  Rangelands;  Range of data
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Pan Z; Li LH; Du Y; Lin YW; Wu RH .High-temperature characteristics of GaInNAs/GaAs single-quantum-well lasers grown by plasma-assisted molecular beam epitaxy ,CHINESE PHYSICS LETTERS,2001 ,18(5):659-661
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