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题名: Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
作者: Zheng LX;  Xie MH;  Xu SJ;  Cheung SH;  Tong SY
发表日期: 2001
摘要: The influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE). When a direct current (DC) is used to heat the sample, long distance migration of Ga adatoms and diffusion asymmetry of N adatoms at steps are observed. On the other hand, if an alternating current (AC) is used, no such preferential adatom migration is found. This effect is attributed to the effective positive charges of surface adatoms. representing an effect of electro-migration. The implications of such current-induced surface migration to GaN epitaxy are subsequently investigated. It is seen to firstly change the distribution of Ga adatoms on a growing surface, and thus make the growth to be Ga-limited at one side of the sample but N-limited at the other side. This leads to different optical qualities of the film and different morphologies of the surface. (C) 2001 Elsevier Science B.V. All rights reserved.
KOS主题词: atomic layer deposition;  Nitrides
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY .Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2001 ,227(0 ):376-380
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