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题名: The effects of pre-irradiation on the formation of Si1-xCx alloys
作者: Wang YS;  Li JM;  Wang YB;  Wang YT;  Sun GS;  Lin LY
发表日期: 2001
摘要: Carbon ions were implanted into crystal Si to a concentration of (0.6-1.5)at% at room temperature. Some samples were pre-irradiated with S-29(i)+ ions, while others were not pre-irradiated. Then the two kinds of samples were implanted with C-12(+) ions simultaneously, and Si1-xCx alloys were grown by solid phase epitaxy with high-temperature annealing. The effects of preirradiation on the formation of Si1-xCx alloys were studied. If the dose of implanted C ion was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implantation, and then it was difficult for Si1-xCx alloys to form after annealine, at 950 degreesC. Pre-irradiation was advantageous for Si1-xCx alloy formation. With the increase of C ion dose, the damage produced by C ions increased. Pre-irradiation was unfavorable for Si1-xCx, alloy formation. If the implanted C concentration was higher than that for solid phase epitaxy solution, only part of the implanted C atoms form Si1-xCx alloys and the effects of pre-irradiation could be neglected. As the annealing temperature was increased to 1050 degreesC, Si1-xCx alloys in both pre-irradiated and unpreirradiated samples of low C concentration remained, whereas most part of Si1-xCx alloys in samples with high C concentration vanished.
KOS主题词: Ion implantation;  Epitaxy;  Metric system;  Silicon;  Implantation;  Carbon;  Bore
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang YS; Li JM; Wang YB; Wang YT; Sun GS; Lin LY .The effects of pre-irradiation on the formation of Si1-xCx alloys ,ACTA PHYSICA SINICA,2001 ,50(7):1329-1333
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