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题名: Photoluminescence of rapid-thermal annealed Mg-doped GaN films
作者: Wang LS;  Fong WK;  Surya C;  Cheah KW;  Zheng WH;  Wang ZG
发表日期: 2001
摘要: We report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition, The objective is to examine the effects of rapid-thermal annealing on Mg-related emissions. It is observed that the peak position of the 2.7-2.8 eV emission line is a function of the device temperature and annealing conditions, The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the Mg-related complex dissociation. The blue shift of the 2.7-2.8 eV emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. In addition, quenching of minor peaks at 3.2 and 3.3 eV are observed and their possible origin is discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.
KOS主题词: Metal organic chemical vapor deposition;  Photoluminescence;  X-ray crystallography;  Rapid thermal processing;  Recombination;  emission;  Water-power;  Force and energy;  Bands
刊名: SOLID-STATE ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang LS; Fong WK; Surya C; Cheah KW; Zheng WH; Wang ZG .Photoluminescence of rapid-thermal annealed Mg-doped GaN films ,SOLID-STATE ELECTRONICS,2001 ,45(7):1153-1157
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