高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD
作者: Zheng XH;  Qu B;  Wang YT;  Feng ZH;  Han JY;  Yang H;  Liang JW
发表日期: 2001
摘要: A determination of {1 1 1}A and {1 1 1}B in cubic GaN(c-GaN) was investigated by X-ray diffraction technique in detail. The c-GaN films are grown on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition(MOCVD). The difference of integrated intensities measured by omega scan for the different order diffractions from {1 1 1}A and {1 1 1}B planes in the four-circle diffractometer gives convincing evidence as to which is the {1 1 1}A and which is the {1 1 1}B planes. The lesser deviation between the ratios of /F-h k l/(2)//F-(h) over bar (k) over bar (l) over bar/(2) and the calculated values after dispersion correction for atomic scattering factor shows that the content of parasitic hexagonal GaN(h-GaN) grown on c-GaN{1 1 1}A planes is higher than that on {1 1 1}B planes. The reciprocal space mappings provide additional proof that the h-GaN inclusions in c-GaN films appear as lamellar structure. (C) 2001 Published by Elsevier Science B.V.
KOS主题词: X-ray crystallography;  Metal organic chemical vapor deposition;  Gallium compounds;  Gallium arsenide
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
1121.pdf133KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Zheng XH; Qu B; Wang YT; Feng ZH; Han JY; Yang H; Liang JW .Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD ,JOURNAL OF CRYSTAL GROWTH,2001 ,233(1-2):52-56
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Zheng XH]的文章
 [Qu B]的文章
 [Wang YT]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Zheng XH]的文章
 [Qu B]的文章
 [Wang YT]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发