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题名: Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates
作者: Zheng XH;  Qu B;  Wang YT;  Dai ZZ;  Han JY;  Yang H;  Liang JW
发表日期: 2001
摘要: Microtwins in the 3C-SiC films grown on Si(0 0 1) by atmosphere pressure chemical vapor deposition (APCVD) were investigated in detail using X-ray four-circle diffractometry. The Phi scan shows that 3C-SiC films can grow on Si substrates epitaxially and epitaxial relationship is revealed as (0 0 1)(3C) (SiC)parallel to (0 0 1)(Si),[1 1 1](3C-SiC)parallel to [1 1 1](Si). Other diffraction peaks at about 15.8 degrees in x emerged in the pole figures of the (I 1 1) 3C-SiC. We performed the pole figure of (1 0 (1) over bar 0)h-SiC and the reciprocal space mapping from the (1 1 1) reciprocal lattice point of base SiC to the (0 0 2) point of microtwin for the first time, indicating that the diffraction peaks at 15.8 degrees in x result from not hexagonal SiC but microtwins of 3C-SiC, and twin inclusions are estimated to be around 1%. (C) 2001 Published by Elsevier Science B.V.
KOS主题词: X-ray crystallography;  Silicon carbide;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Development;  Metric system;  Silicon;  Defects;  Epitaxy;  Layers;  atomic layer deposition
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zheng XH; Qu B; Wang YT; Dai ZZ; Han JY; Yang H; Liang JW .Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates ,JOURNAL OF CRYSTAL GROWTH,2001 ,233(1-2):40-44
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