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题名: Carbonization process of Si(100) by ion-beam bombardment
作者: Liao MY;  Chai CL;  Yao ZY;  Yang SY;  Liu ZK;  Wang ZG
发表日期: 2001
摘要: The evolution of carbonization process on Si as a function of ion dose has been carried out by mass-selected ion-beam deposition technique. 3C-SiC layer has been obtained at low ion dose, which has been observed by reflection high energy electron diffraction and X-ray photoelectron spectroscopy (XPS). The chemical states of Si and carbon have also been examined as a function of ion dose by XPS. Carbon enrichment was found regardless of the used ion dose here, which may be due to the high deposition rate. The formation mechanism of SiC has also been discussed based on the subplantation process. The work will also provide further understanding of the ion-bombardment effect. (C) 2001 Published by Elsevier Science B.V.
KOS主题词: Diffusion;  growth models;  Ion bombardment;  Reflection high energy electron diffraction;  Development;  sedimentation;  Epitaxy;  Silicon;  diamond
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liao MY; Chai CL; Yao ZY; Yang SY; Liu ZK; Wang ZG .Carbonization process of Si(100) by ion-beam bombardment ,JOURNAL OF CRYSTAL GROWTH,2001 ,233(3):446-450
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