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题名: Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells
作者: Tang Y;  Zheng HZ;  Yang FH;  Tan PH;  Li YX
发表日期: 2001
摘要: We have investigated the photo-excited capacitance-voltage (C-V) characteristics as well as the photoluminescence spectra under different biases of a wide quantum well (QW) embedded in an n(+)-i-n(+) double-barrier structure. The pronounced peak feature at zero bias in the C-V spectrum observed upon illumination is regarded as a kind of quantum capacitance related to the quantum confined Stark effect, originating from the spatial separation of the photo-generated electron and hole gas in the QW. This fact is further demonstrated through the comparison between the C-V curve with the PL intensity versus applied voltage relationship under the same excitation. The results may provide us with a more direct and sensitive means in the detection of the separation and accumulation of both types of free carriers-electrons and holes-in low-dimensional semiconductor structures, especially in a new type of optical memory cell.
KOS主题词: Electron paramagnetic resonance spectroscopy;  Holes
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Tang Y; Zheng HZ; Yang FH; Tan PH; Li YX .Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2001 ,16(10):822-825
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