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题名: GaInNAs/GaAs multiple-quantum well resonant-cavity-enhanced photodetectors at 1.3 mu m
作者: Pan Z;  Li LH;  Xu YQ;  Zhang W;  Lin YW;  Zhang RK;  Zhong Y;  Ren XM
发表日期: 2001
摘要: A GaInNAs/GaAs multiple quantum well (MQW) resonant-cavity enhanced photodetector (RCF-PD) operated at a wavelength of 1.3 mum with the full width at half maximum of 4nm has been demonstrated. The GaInNAs RCE - PD was grown by molecular beam epitaxy using a homemade ion-removed dc plasma cell as a nitrogen source. GaInNAs/GaAs MQW shows a strong exciton peak at room temperature, which is very beneficial for applications in long-wavelength absorption devices. For a 100 mum diameter RCE-PD, the dark current is 20 and 32 pA at biases of 0 and 6 V, respectively, and the breakdown voltage is - 18 V. The measured 3 dB bandwidth is 308 MHz, which is limited by the resistance of p-type distributed Bragg reflector mirror. The tunable wavelength in a range of 18 nm with the angle of incident light was observed.
KOS主题词: atomic layer deposition;  Development;  WAVELENGTH;  Gallium arsenide
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Pan Z; Li LH; Xu YQ; Zhang W; Lin YW; Zhang RK; Zhong Y; Ren XM .GaInNAs/GaAs multiple-quantum well resonant-cavity-enhanced photodetectors at 1.3 mu m ,CHINESE PHYSICS LETTERS,2001 ,18(9):1249-1251
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