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题名: Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD
作者: Feng Y;  Zhu M;  Liu F;  Liu J;  Han H;  Han Y
发表日期: 2001
摘要: Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.
KOS主题词: Structure;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Hydrogen
刊名: THIN SOLID FILMS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Feng Y; Zhu M; Liu F; Liu J; Han H; Han Y .Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD ,THIN SOLID FILMS,2001 ,395(1-2):213-216
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