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题名: Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces
作者: Shen WZ;  Jiang LF;  Yu G;  Lai ZY;  Wang XG;  Shen SC;  Cao X
发表日期: 2001
摘要: In this communication, we have carried out a detailed investigation of radiative recombination in n-GaAs homojunction far-infrared detector structures with multilayer emitter (n(+))-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. The observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. A photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. Furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. (C) 2001 American Institute of Physics.
KOS主题词: Photoluminescence;  Layers
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Shen WZ; Jiang LF; Yu G; Lai ZY; Wang XG; Shen SC; Cao X .Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces ,JOURNAL OF APPLIED PHYSICS,2001 ,90(10):5444-5446
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