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题名: A geometrical model of GaN morphology in initial growth stage
作者: Yuan HR;  Chen Z;  Lu DC;  Liu XL;  Han PD;  Wang XH
发表日期: 2002
摘要: Based on morphology observed by atomic force microscopy, a geometrical model was proposed in order to explain the statistical results obtained from morphology observation on GaN in initial growth stage. Four parameters were introduced to describe the morphology characteristics in this model. Least-square fitting of height distribution was performed. The height distribution derived from the model agreed well with that obtained from experimental records. It was also found that the model should be further advanced to understand the growth of GaN in initial growth stage. (C) 2002 Elsevier Science BY. All rights reserved.
KOS主题词: Computer simulation;  biological specimen preparation;  Atomic force microscopy;  Nitrides;  Aluminum oxide
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Yuan HR; Chen Z; Lu DC; Liu XL; Han PD; Wang XH .A geometrical model of GaN morphology in initial growth stage ,JOURNAL OF CRYSTAL GROWTH,2002,234(1):115-120
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