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题名: Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats
作者: Gao YZ;  Kan H;  Gao FS;  Gong XY;  Yamaguchi T
发表日期: 2002
摘要: In this study, we first present the process of the melt epitaxial (ME) growth method, and the improvement of low-temperature electron mobility of the long-wavelength InAsSb epilayers grown by ME in a fused silica boat. The electrical properties were investigated by van der Pauw measurement at 300 and 77 K. It is seen that the electron mobility of the InAsSb samples grown by graphite boat decreased from 55,700 to 26,600 cm(2)/V s when the temperature was reduced from 300 to 77 K, while for the samples grown by fused silica boat, the electron mobility increased from 52,600 at 300 K to 54,400 cm(2)/V s at 77 K. The electron mobility of 54,400cm(2)/Vs is the best result, so far, for the InAsSb materials with cutoff wavelength of 8-12 mum at 77 K. This may be attributed to the reduction of the carbon contamination by using a fused silica boat instead of a graphite boat. (C) 2002 Elsevier Science B.V. All rights reserved.
KOS主题词: Purification;  X-ray crystallography;  cutoff wavelength;  SINGLE CRYSTALS;  Chrysanthemum morifolium;  Gallium arsenide
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Gao YZ; Kan H; Gao FS; Gong XY; Yamaguchi T .Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats ,JOURNAL OF CRYSTAL GROWTH,2002,234(1):85-90
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