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题名: Statistical investigation on morphology development of gallium nitride in initial growth stage
作者: Yuan HR;  Lu DC;  Liu XL;  Chen Z;  Han P;  Wang XH;  Wang D
发表日期: 2002
摘要: Morphology of Gallium Nitride (GaN) in initial growth stage was observed with atomic force microscopy (AFM) and scanning electron microscopy (SEM), It was found that the epilayer developed from islands to coalesced film. Statistics based on AFM observation was carried out to investigate the morphology characteristics. It was found that the evolution of height distribution could be used to describe morphology development. Statistics also clearly revealed variation of top-face growth rate among islands. Indium-doping effect on morphology development was also statistically studied. The roughening and smoothing behavior in morphology development was explained. (C) 2002 Elsevier Science B.V. All rights reserved.
KOS主题词: Atomic force microscopy;  biological specimen preparation;  Nitrides;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Aluminum oxide;  Epitaxy;  atomic layer deposition
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Yuan HR; Lu DC; Liu XL; Chen Z; Han P; Wang XH; Wang D .Statistical investigation on morphology development of gallium nitride in initial growth stage ,JOURNAL OF CRYSTAL GROWTH,2002,234(1):77-84
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