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题名: Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs
作者: Yang RX;  Zhang FQ;  Chen NF
发表日期: 2001
摘要: Annealing was carried out at 950 and 1120 degreesC under various As pressure for undoped (ND) semi-insulating (SI) LECGaAs. The effects of annealing on native defects and electrical properties were investigated. Experimental results indicate that, after an annealing at 950 degreesC for 14 h under low As pressure, the Hall mobility decreases and the resistivity increases dramatically for the samples. These changes in electrical properties are due to the generation of intrinsic acceptor defects, and the generation of the intrinsic acceptor defects originates from the outdiffusion of As interstitial at high temperature. The generation of the intrinsic defects and these changes in electrical properties can be suppressed by increasing the applied As pressure during annealing. The concentration of the main donor defect E12 (AsGaVGa) can be decreased by about one order of magnitude by an evacuated annealing at 1120 degreesC for 2-8 h followed by a fast cooling. The decrease in E12 concentration can also be suppressed by increasing the As pressure during annealing.
KOS主题词: Rapid thermal processing;  Heat treatment
刊名: RARE METALS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Yang RX; Zhang FQ; Chen NF .Effect of as interstitial diffusionon on the properties of undoped semi-insulating LECGaAs ,RARE METALS,2001 ,20(3):187-191
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