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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: InAs/GaAs single-electron quantum dot qubit
作者: Li SS;  Xia JB;  Liu JL;  Yang FH;  Niu ZC;  Feng SL;  Zheng HZ
发表日期: 2001
摘要: The time evolution of the quantum mechanical state of an electron is calculated in the framework of the effective-mass envelope function theory for an InAs/GaAs quantum dot. The results indicate that the superposition state electron density oscillates in the quantum dot, with a period on the order of femtoseconds. The interaction energy E-ij between two electrons located in different quantum dots is calculated for one electron in the ith pure quantum state and another in the jth pure quantum state. We find that E-11]E-12]E-22, and E-ij decreases as the distance between the two quantum dots increases. We present a parameter-phase diagram which defines the parameter region for the use of an InAs/GaAs quantum dot as a two-level quantum system in quantum computation. A static electric field is found to efficiently prolong the decoherence time. Our results should be useful for designing the solid-state implementation of quantum computing. (C) 2001 American Institute of Physics.
KOS主题词: logic gates;  Computation;  Biocomputers;  State
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li SS; Xia JB; Liu JL; Yang FH; Niu ZC; Feng SL; Zheng HZ .InAs/GaAs single-electron quantum dot qubit ,JOURNAL OF APPLIED PHYSICS,2001 ,90(12):6151-6155
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