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题名: Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films
作者: Zhang SB;  Kong GL;  Xu YY;  Wang YQ;  Diao HW;  Liao XB
发表日期: 2002
摘要: Transient photoconductivity and its light-induced change were investigated by using a Model 4400 boxcar averager and signal processor for lightly boron-doped a-Si : H films. The transient photoconductivities of the sample were measured at an annealed state and light-soaked states. The transient decay process of the photoconductivity can be fitted fairly well by a second-order exponential decay function, which indicates that the decay process is related with two different traps. It is noteworthy that the photoconductivity of the film increases after light-soaking. This may be due to the deactivity of the boron acceptor B-4(-), and thus some of the boron atoms can no longer act as acceptors and drives E-F to shifts upward. Consequently, the number of effective recombination centers may be reduced and so the photoconductivity increases.
KOS主题词: amorphous silicon
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhang SB; Kong GL; Xu YY; Wang YQ; Diao HW; Liao XB .Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films ,ACTA PHYSICA SINICA,2002,51 (1):111-114
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