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题名: Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices
作者: Zhuang QD;  Yoon SF;  Li HX;  Li JM;  Zeng YP;  Kong MY;  Lin LY
发表日期: 2001
摘要: The self-organization growth of In0.32Ga0.68As/GaAs quantum dots (QDs) superlattices is investigated by molecular beam epitaxy. It is found that high growth temperature and low growth rate are favorable for the formation of perfect vertically aligned QDs superlattices. The aspect ratio (height versus diameter) of QD increases from 0.16 to 0.23 with increase number of bi-layer. We propose that this shape change play a significant role to improve the uniformity of QDs superlattices. Features in the variable temperature photoluminescence characteristics indicate the high uniformity of the QDs. Strong infrared absorption in the 8-12 mum was observed. Our results suggest the promising applications of QDs in normal sensitive infrared photodetectors. (C) 2001 Elsevier Science B.V. All rights reserved.
KOS主题词: Quantum dots;  Photoluminescence;  Infrared radiation;  Development;  Photoluminescence;  Heterostructures;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis;  detector
刊名: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhuang QD; Yoon SF; Li HX; Li JM; Zeng YP; Kong MY; Lin LY .Structural, optical and intraband absorption properties of vertically aligned In0.32Ga0.68As/GaAs quantum dots superlattices ,PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2001,11 (4):384-390
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