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题名: ECR plasma in growth of cubic GaN by low pressure MOCVD
作者: Gu B;  Xu Y;  Qin FW;  Wang SS;  Sui Y;  Wang ZG
发表日期: 2002
摘要: To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs (001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (similar to600degreesC) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity,coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.
KOS主题词: atomic layer deposition;  Light emitting diodes;  Vapor phase epitaxy;  Gallium nitride;  Gallium arsenide
刊名: PLASMA CHEMISTRY AND PLASMA PROCESSING
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Gu B; Xu Y; Qin FW; Wang SS; Sui Y; Wang ZG .ECR plasma in growth of cubic GaN by low pressure MOCVD ,PLASMA CHEMISTRY AND PLASMA PROCESSING,2002,22 (1):159-174
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