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题名: Positron-annihilation study of compensation defects in InP
作者: Shan YY;  Deng AH;  Ling CC;  Fung S;  Ling CD;  Zhao YW;  Sun TN;  Sun NF
发表日期: 2002
摘要: Positron-annihilation lifetime and positron-annihilation Doppler-broadening (PADB) spectroscopies have been employed to investigate the formation of vacancy-type compensation defects in n-type undoped liquid encapsulated Czochrolski grown InP, which undergoes conduction-type conversions under high temperature annealing. N-type InP becomes p-type semiconducting by short time annealing at 700 degreesC, and then turns into n-type again after further annealing but with a much higher resistivity. Long time annealing at 950 degreesC makes the material semi-insulating. Positron lifetime measurements show that the positron average lifetime tau(av) increases from 245 ps to a higher value of 247 ps for the first n-type to p-type conversion and decreases to 240 ps for the ensuing p-type to n-type conversion. The value of tau(av) increases slightly to 242 ps upon further annealing and attains a value of 250 ps under 90 h annealing at 950 degreesC. These results together with those of PADB measurements are explained by the model proposed in our previous study. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy-type defects and the progressive variation of their concentrations during annealing are related to the electrical properties of the bulk InP material. (C) 2002 American Institute of Physics.
KOS主题词: Indium phosphide;  life time;  mechanism;  acceptor;  Development;  Gallium arsenide
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Shan YY; Deng AH; Ling CC; Fung S; Ling CD; Zhao YW; Sun TN; Sun NF .Positron-annihilation study of compensation defects in InP ,JOURNAL OF APPLIED PHYSICS,2002,91 (4):1998-2001
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