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题名: A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition
作者: Chen Z;  Lu DH;  Yuan HR;  Han P;  Liu XL;  Li YF;  Wang XH;  Lu Y;  Wang ZG
发表日期: 2002
摘要: A new method to form nanoscale InGaN quantum dots using MOCVD is reported, This method is much different from a method. which uses surfactant or the Stranski-Krastannow growth mode. The dots were formed by increasing the energy barrier for adatoms, which are hopping by surface passivation, and by decreasing the growth temperature. Thus, the new method can be called as a passivation-low-temperature method. Regular high-temperature GaN films were grown first and were passivated. A low-temperature thin layer of GaN dot was then deposited on the surface that acted as the adjusting layer. At last the high-density InGaN dots could be fabricated on the adjusting layer. Atomic force microscopy measurement revealed that InGaN dots were small enough to expect zero-dimensional quantum effects: The islands were typically 80 nm wide and 5 nm high. Their density was about 6 x 10(10) cm(-2). Strong photoluminescence emission from the dots is observed at room temperature, which is much stronger than that of the homogeneous InGaN film with the same growth time. Furthermore, the PL emission of the GaN adjusting layer shows 21 meV blueshift compared with the band edge emission of the GaN due to quantum confine effect. (C) 2002 Elsevier Science B.V. All rights reserved.
KOS主题词: Nanostructured materials;  Metal organic chemical vapor deposition;  Nitrides;  Epitaxy;  Surfaces;  Temperature;  Dependency;  Mode;  Wire
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Chen Z; Lu DH; Yuan HR; Han P; Liu XL; Li YF; Wang XH; Lu Y; Wang ZG .A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition ,JOURNAL OF CRYSTAL GROWTH,2002,235 (1-4):188-194
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