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题名: Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
作者: Lu LW;  Zhang YH;  Xu ZT;  Xu ZY;  Wang ZG;  Wang J;  Ge WK
发表日期: 2002
摘要: Thermal processing of strained In0.2Ga0.8As/GaAs graded-index separate confinement heterostructure single quantum well laser diodes grown by molecular beam epitaxy is investigated. It is found that rapid thermal annealing can improve the 77K photoluminescence efficiency and electron emission from the active layer, due to the removal of nonradiative centers from the InGaAs/GaAs interface. Because of the interdiffusion of Al and Ga atoms, rapid thermal annealing increases simultaneously the density of DX centers in the AlGaAs graded layer. The current stressing experiments of postgrowth and annealed laser diodes are indicative of a corresponding increase in the concentration of DX centers, suggesting that DX centers may be responsible for the degradation of laser diode performance.
KOS主题词: Quantum Well;  Rapid thermal processing;  Electrons--Emission;  DX centers;  atomic layer deposition
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Lu LW; Zhang YH; Xu ZT; Xu ZY; Wang ZG; Wang J; Ge WK .Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes ,ACTA PHYSICA SINICA,2002,51 (2):367-371
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