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题名: Valence band structures of the InAs/GaAs quantum ring
作者: Li SS;  Xia JB
发表日期: 2002
摘要: In the framework of effective-mass envelope function theory, the valence energy subbands and optical transitions of the InAs/GaAs quantum ring are calculated by using a four-band valence band model. Our model can be used to calculate the hole states of quantum wells, quantum wires, and quantum dots. The effect of finite offset and valence band mixing are taken into account. The energy levels of the hole are calculated in the different shapes of rings. Our calculations show that the effect of the difference between effective masses of holes in different materials on the valence subband structures is significant. Our theoretical results are consistent with the conclusion of the recent experimental measurements and should be useful for researching and making low-dimensional semiconductor optoelectronic devices. (C) 2002 American Institute of Physics.
KOS主题词: EMT
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li SS; Xia JB .Valence band structures of the InAs/GaAs quantum ring ,JOURNAL OF APPLIED PHYSICS,2002,91 (5):3227-3231
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