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题名: Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam
作者: Liao MY;  Feng ZH;  Yang SY;  Chai CL;  Liu ZK;  Yang JL;  Wang ZG
发表日期: 2002
摘要: The temperature dependence of photoluminescence (PL) from a-C:H film deposited by CH3+ ion beam has been performed and an anomalous behavior has been reported. A transition temperature at which the PL intensity, peak position and full width at the half maximum change sharply was observed. It is proposed that different structure units. at least three, are responsible for such behavior. Above the transition point. increasing temperature will lead to the dominance of non-radiative recombination process, which quenches the PL overall and preferentially the red part, Possible emission mechanisms have been discussed. (C) 2002 Elsevier Science Ltd. All rights reserved.
KOS主题词: Luminescence;  Semiconductors;  Optical properties;  Porous silicon;  Nanocrystals;  Luminescence;  mechanism
刊名: SOLID STATE COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liao MY; Feng ZH; Yang SY; Chai CL; Liu ZK; Yang JL; Wang ZG .Anomalous temperature dependence of photoluminescence from a-C : H film deposited by energetic hydrocarbon ion beam ,SOLID STATE COMMUNICATIONS,2002,121 (5):287-290
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