高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process
作者: Tan LW;  Zan YD;  Wang J;  Wang QY;  Yu YH;  Wang SR;  Liu ZL;  Lin LY
发表日期: 2002
摘要: gamma-Al2O3 films were grown on Si (10 0) substrates using the sources of TMA (AI(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. The effects of temperature control on the crystalline quality, surface morphology, uniformity and dielectricity were investigated. It has been found that the,gamma-Al2O3 film prepared at a temperature of 1000degreesC has a good crystalline quality, but the surface morphology, uniformity and dielectricity were poor due to the etching reaction between 0, and Si substrate in the initial growth stage. However, under a temperature-varied multi-step process the properties Of gamma-Al2O3 film were improved. The films have a mirror-like surface and the dielectricity was superior to that grown under a single-step process. The uniformity of gamma-Al2O3 films for 2-in epi-wafer was <5%, it is better than that disclosed elsewhere. In order to improve the crystalline quality, the gamma-Al2O3 films were annealed for I h in O-2 atmosphere. (C) 2002 Elsevier Science B.V. All rights reserved.
KOS主题词: Metal organic chemical vapor deposition;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Epitaxy;  Metric system;  Silicon
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
1734.pdf167KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Tan LW; Zan YD; Wang J; Wang QY; Yu YH; Wang SR; Liu ZL; Lin LY .Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process ,JOURNAL OF CRYSTAL GROWTH,2002,236 (1-3):261-266
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Tan LW]的文章
 [Zan YD]的文章
 [Wang J]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Tan LW]的文章
 [Zan YD]的文章
 [Wang J]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发