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题名: Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer
作者: Lu Y;  Liu XL;  Lu DC;  Yuan HR;  Chen Z;  Fan TW;  Li YF;  Han PD;  Wang XH;  Wang D;  Wang ZG
发表日期: 2002
摘要: High-quality GaN epilayers were grown on Si (1 1 1) substrate by metalorganic chemical vapor deposition. The growth process was featured by using an ultrathin AlN wetting layer (WL) in combination with a low-temperature (LT) GaN nucleation layer (NL). The full-width at half-maximum (FWHM) of the X-ray rocking curve for the GaN (0 0 0 2) diffraction was 15 arcmin. The dislocation density estimated from TEM investigation was found to be of the order of 10(9)cm(-2). The FWHM of the dominant band edge emission peak of the GaN was measured to be 47 meV by photoluminescence measurement at room temperature. The ultrathin AlN WL was produced by nitridation of the aluminium pre-covered substrate surface. The reflection high-energy electron diffraction showed that the AlN WL was wurtzite and the surface morphology was like the nitridated surface of sapphire by the atomic force microscopy measurement. X-ray photoelectron spectroscopy measurement showed that Si and SixNy at a certain concentration were intermixed in the AlN WL. This study suggests that by employing an appropriate WL combined with a LT NL, high-quality heteroepitaxy is achievable even with large mismatch. (C) 2002 Elsevier Science B.V. All rights reserved.
KOS主题词: substrates;  Metal organic chemical vapor deposition;  Gallium compounds;  Nitrides;  Epitaxy;  Silicon;  Aluminum oxide;  Film;  reactively sputtered coatings
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Lu Y; Liu XL; Lu DC; Yuan HR; Chen Z; Fan TW; Li YF; Han PD; Wang XH; Wang D; Wang ZG .Investigation of GaN layer grown on Si(111) substrate using an ultrathin AlN wetting layer ,JOURNAL OF CRYSTAL GROWTH,2002,236 (1-3):77-84
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