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题名: Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation
作者: Sun ZZ;  Yoon SF;  Wu J;  Wang ZG
发表日期: 2002
摘要: InAs/In0.52Al0.48As nanowire multilayer arrays were grown on (001) InP substrate by molecular-beam epitaxy. The structural property of the arrays was investigated by transmission electron microscopy. The results clearly showed the formation of InAs nanowires, evolution of InAs/InAlAs interface, and composition and thickness modulations in the InAlAs spacer layer. A fixed spatial ordering of InAs/InAlAs nanowires was revealed for all the samples. Regardless of the change in InAlAs spacer thickness of different samples, (i) the nanowires of one InAs layer are positioned above the nanowire spacing in the previous InAs layer and (ii) the layer-ordering orientation angle of nanowires is fixed. The results were explained from the viewpoint of the growth kinetics. The effect of InAlAs spacers is suggested to play an important role on the spatial ordering of the nanowire arrays. (C) 2002 American Institute of Physics.
KOS主题词: atomic layer deposition;  Anatomy;  Surfaces;  Development;  alloy
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun ZZ; Yoon SF; Wu J; Wang ZG .Origin of the vertical-anticorrelation arrays of InAs/InAlAs nanowires with a fixed layer-ordering orientation ,JOURNAL OF APPLIED PHYSICS,2002,91 (9):6021-6026
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