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题名: Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate
作者: Liu HY;  Sellers IR;  Airey RJ;  Steer MJ;  Houston PA;  Mowbray DJ;  Cockburn J;  Skolnick MS;  Xu B;  Wang ZG
发表日期: 2002
摘要: The effect of the growth temperature on the properties of InAlAs/AlGaAs quantum dots grown on GaAs(100) substrates is investigated. The optical efficiency and structural uniformity are improved by increasing the growth temperature from 530 to 560 degreesC. The improvements of InAlAs/AlGaAs quantum-dot characteristics could be explained by suppressing the incorporation of oxygen and the formation of group-III vacancies. Furthermore, edge-emitting laser diodes with six quantum-dot layers grown at 560 degreesC have been fabricated. Lasing occurs via the ground state at 725 nm, with a room-temperature threshold current density of 3.9 kA/cm(2), significantly better than previously reported values for this quantum-dot systems. (C) 2002 American Institute of Physics.
KOS主题词: atomic layer deposition;  Semiconductor lasers;  Nm
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu HY; Sellers IR; Airey RJ; Steer MJ; Houston PA; Mowbray DJ; Cockburn J; Skolnick MS; Xu B; Wang ZG .Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate ,APPLIED PHYSICS LETTERS,2002,80 (20):3769-3771
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