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题名: Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate
作者: Sun YP;  Fu Y;  Qu B;  Wang YT;  Feng ZH;  Shen XM;  Zhao DG;  Zheng XH;  Duan LH;  Li BC;  Zhang SM;  Yang H
发表日期: 2002
摘要: We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH : H2O2=1 : 10. SEM and PL results show that wafer bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa2 and Ni4N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.
KOS主题词: Lithography, Electron beam;  Cubic;  Light emitting diodes;  Aerodynamics;  contact;  Lasers
刊名: SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun YP; Fu Y; Qu B; Wang YT; Feng ZH; Shen XM; Zhao DG; Zheng XH; Duan LH; Li BC; Zhang SM; Yang H .Wafer bonding technique used for the integration of cubic GaN/GaAs (001) with Si substrate ,SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,2002,45 (3):255-260
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