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题名: Structural characterization of stable amorphous silicon films
作者: Zhang SB;  Kong GL;  Wang YQ;  Sheng SR;  Liao XB
发表日期: 2002
摘要: A kind of hydrogenated diphasic, silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystalline state. The photoelectronic and microstructural properties of the films have been investigated by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). Our experimental results and corresponding analyses showed that the diphasic films, incorporated with a subtle boron compensation, could gain both the fine photosensitivity and high stability, provided the crystalline fraction (f) was controlled in the range of 0 < f < 0.3. When compared with the conventional hydrogenated amorphous silicon (a-Si:H), the diphasic films are more ordered and robust in the microstructure, and have a less clustered phase in the Si-H bond configurations. (C) 2002 Elsevier Science Ltd. All rights reserved.
KOS主题词: Semiconductors;  Thermal conductivity;  electric conduction;  Metric system;  Silicon
刊名: SOLID STATE COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhang SB; Kong GL; Wang YQ; Sheng SR; Liao XB .Structural characterization of stable amorphous silicon films ,SOLID STATE COMMUNICATIONS,2002,122 (5):283-286
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