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题名: Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling
作者: Wu MF;  Chen CC;  Zhu DZ;  Zhou SQ;  Vantomme A;  Langouche G;  Zhang BS;  Yang H
发表日期: 2002
摘要: Rutherford backscattering and channeling have been used to characterize the structure of a GaN layer grown on a Si(111) substrate. The results show that a 1.26 mum GaN epitaxial layer with a rather abrupt interface and a good crystalline quality (chi(min)=3.4%) can be grown on a Si(111) substrate. Using the channeling angular scan around an off-normal <1 (2) over bar 13> axis in the {10 (1) over bar0} plane of the GaN layer, the tetragonal distortion e(T), which is caused by the elastic strain in the epilayer, can be determined. Moreover, the depth dependence of the e(T) can be obtained using this technique. A fully relaxed (e(T)=0) GaN layer for a thickness <2.8 mum is expected. (C) 2002 American Institute of Physics.
KOS主题词: X-ray crystallography;  elastic deformation
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wu MF; Chen CC; Zhu DZ; Zhou SQ; Vantomme A; Langouche G; Zhang BS; Yang H .Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling ,APPLIED PHYSICS LETTERS,2002,80 (22):4130-4132
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