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题名: Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching
作者: Feng G;  Zheng XH;  Fu Y;  Zhu JJ;  Shen XM;  Zhang BS;  Zhao DG;  Wang YT;  Yang H;  Liang JW
发表日期: 2002
摘要: The crystallographic tilt of the lateral epitaxial overgrown (LEO) GaN on sapphire Substrate with SiNx mask is investiaated by double crystal X-ray diffraction. Two wing peaks beside the GaN 0002 peak can be observed for the as-grown LEO GaN. During the selective etching of SiNx mask, each wing peak splits into two peaks, one of which disappears as the mask is removed, while the other remains unchanged. This indicates that the crystallographic tilt of the overgrown region is caused not only by the plastic deformation resulted from the bending of threading dislocations, but by the non-uniformity elastic deformation related with the GaN, SiNx interfacial forces. The widths of these two peaks are also studied in this paper. (C) 2002 Elsevier Science B.V. All rights reserved.
KOS主题词: X-ray crystallography;  Aggressiveness;  Metal organic chemical vapor deposition;  Nitrides;  Light emitting diodes;  Vapor phase epitaxy;  Photography--Films;  Finite volume method;  Dislocations;  Density;  Development;  Layers
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Feng G; Zheng XH; Fu Y; Zhu JJ; Shen XM; Zhang BS; Zhao DG; Wang YT; Yang H; Liang JW .Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching ,JOURNAL OF CRYSTAL GROWTH,2002,240 (3-4):368-372
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