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题名: Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer
作者: Zhang ZY;  Xu B;  Jin P;  Meng XQ;  Li CM;  Ye XL;  Wang ZG
发表日期: 2002
摘要: We have fabricated a quantum dot (QD) structure for long-wavelength temperature-insensitive semiconductor laser by introducing a combined InAlAs and InGaAs overgrowth layer on InAs/GaAs QDs. We found that QDs formed on GaAs (100) substrate by InAs deposition followed by the InAlAs and InGaAs combination layer demonstrate two effects: one is the photoluminescence peak redshift towards 1.35 mum at room temperature, the other is that the energy separation between the ground and first excited states can be up to 103 meV. These results are attributed to the fact that InAs/GaAs intermixing caused by In segregation at substrate temperature of 520 degreesC can be considerably suppressed by the thin InAlAs layer and the strain in the quantum dots can be reduced by the combined InAlAs and InGaAs layer. (C) 2002 American Institute of Physics.
KOS主题词: atomic layer deposition;  temperature dependence;  Development;  Gallium arsenide;  Lasers
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhang ZY; Xu B; Jin P; Meng XQ; Li CM; Ye XL; Wang ZG .Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer ,JOURNAL OF APPLIED PHYSICS,2002,92 (1):511-514
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