高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique
作者: Zhou JP;  Chen NF;  Zhang FQ;  Song SL;  Chai CL;  Yang SY;  Liu ZK;  Lin LY
发表日期: 2002
摘要: Semiconducting gadolinium silicide GdxSi samples were prepared by mass-analyzed low-energy dual ion beam epitaxy technique. Auger electron spectroscopy depth profiles indicate that the gadolinium ions are implanted into the single-crystal silicon substrate and formed 20 nm thick GdxSi film. X-ray double-crystal diffraction measurement shows that there is no new phase formed. The XPS spectra show that one type of silicon peaks whose binding energy is between that of silicide and silicon dioxide, and the gadolinium peak of binding energy is between that of metal Gd and Gd2O3. All of these results indicate that an amorphous semiconductor is formed. (C) 2002 Elsevier Science B.V. All rights reserved.
KOS主题词: Auger electron spectroscopy;  X-ray crystallography;  Photoelectron spectroscopy;  X-ray photoelectron spectroscopy;  Magnetic semiconductors;  transition;  insulator;  Silicon;  Photography--Films;  Finite volume method
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
1678.pdf178KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Zhou JP; Chen NF; Zhang FQ; Song SL; Chai CL; Yang SY; Liu ZK; Lin LY .GdxSi grown with mass-analyzed low energy dual ion beam epitaxy technique ,JOURNAL OF CRYSTAL GROWTH,2002,242 (3-4):389-394
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Zhou JP]的文章
 [Chen NF]的文章
 [Zhang FQ]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Zhou JP]的文章
 [Chen NF]的文章
 [Zhang FQ]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发