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题名: Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD
作者: Wang H;  Shang SX;  Yao WF;  Hou Y;  Xu XH;  Wang D;  Wang M;  Yu JZ
发表日期: 2002
摘要: The growth of Bi2Ti2O7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480similar to550 degreesC is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi2Ti2O7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant (epsilon) and loss tangent (tgdelta) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/mum(2). The resistivity is higher than 1x10(12) Omega. .cm under the applied voltage of 5V. The Bi2Ti2O7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).
KOS主题词: atomic layer deposition;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating
刊名: FERROELECTRICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang H; Shang SX; Yao WF; Hou Y; Xu XH; Wang D; Wang M; Yu JZ .Dielectric properties of Bi2Ti2O7 films grown on Si(100) substrate by APMOCVD ,FERROELECTRICS,2002,271(0):1707-1713
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