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题名: Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures
作者: Wang H;  Wang HL;  Feng SL;  Zhu HJ;  Wang XD;  Guo ZS;  Ning D
发表日期: 2000
摘要: Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.
KOS主题词: Electronic structure;  ab initio calculations;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis
刊名: COMPOUND SEMICONDUCTORS 1999
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang H; Wang HL; Feng SL; Zhu HJ; Wang XD; Guo ZS; Ning D .Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures ,COMPOUND SEMICONDUCTORS 1999,2000 ,(166):251-256
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