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题名: Polarity determination for GaN thin films by electron energy-loss spectroscopy
作者: Kong X;  Hu GQ;  Duan XF;  Lu Y;  Liu XL
发表日期: 2002
摘要: The intensity of the N K edge in electron energy-loss spectra from a GaN thin film shows a pronounced difference when the orientation of the film approaches the (0002) and (000-2) Bragg reflections, along the polar direction. This experimental result can be interpreted by the effect associated with interference between the Bloch waves of the incident electron in the GaN crystal. The theoretical calculations indicate that, at the Bragg condition of g=0002 along the Ga-N bond direction, the thickness-averaged electron current density on the N atom plane is much higher than that at g=000 (2) over bar, with a maximum as the specimen thickness is about 0.4xi(0002) (the two-beam extinction distance). The delocalization effect on the experimental spectra is also discussed. (C) 2002 American Institute of Physics.
KOS主题词: SINGLE CRYSTALS;  Diffraction
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Kong X; Hu GQ; Duan XF; Lu Y; Liu XL .Polarity determination for GaN thin films by electron energy-loss spectroscopy ,APPLIED PHYSICS LETTERS,2002,81 (11):1990-1992
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