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题名: Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers
作者: Xu SJ;  Zheng LX;  Cheung SH;  Xie MH;  Tong SY;  Yang H
发表日期: 2002
摘要: Linewidth broadening of exciton luminescence in wurtzite and zinc-blende GaN epilayers was investigated as a function of temperature with photoluminescence. A widely accepted theoretical model was used to fit the experimental data, so that the coupling parameters between exciton and acoustic and longitudinal optical phonons were obtained for both structures. It was found that the coupling constants of both exciton-acoustic optical phonon coupling and exciton-longitudinal optical phonon coupling for zinc-blende GaN are almost twice as much as the corresponding values of wurtzite GaN. These results show that the relatively strong exciton-phonon scattering seems to be characteristic to zinc-blende GaN film. (C) 2002 American Institute of Physics.
KOS主题词: atomic layer deposition;  Vapor phase epitaxy;  Binding energy;  Photoluminescence;  Pressure;  Electron;  Gallium arsenide
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Xu SJ; Zheng LX; Cheung SH; Xie MH; Tong SY; Yang H .Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers ,APPLIED PHYSICS LETTERS,2002 ,81 (23):4389-4391
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