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题名: Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells
作者: Cheng BW;  Zhang JG;  Zuo YH;  Mao RW;  Huang CJ;  Luo LP;  Yao F;  Wang QM
发表日期: 2002
摘要: Photoluminescence (PL) of strained SiGe/Si multiple quantum wells (MQW) with flat and undulated SiGe well layers was studied at different temperature. With elevated temperature from 10K, the no-phonon (NP) peak of the SiGe layers in the flat sample has firstly a blue shift due to the dominant transition converting from bound excitons (BE) to free excitons (FE), and then has a red shift when the temperature is higher than 30K because of the narrowing of the band gap. In the undulated sample, however, monotonous blue shift was observed as the temperature was elevated from 10 K to 287 K. The thermally activated electrons, confined in Si due to type-II band alignment, leak into the SiGe crest regions, and the leakage is enhanced with the elevated temperature. It results in a blue shift of the SiGe luminescence spectra.
KOS主题词: Germanium alloys;  Development;  Layers
刊名: INTERNATIONAL JOURNAL OF MODERN PHYSICS B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Cheng BW; Zhang JG; Zuo YH; Mao RW; Huang CJ; Luo LP; Yao F; Wang QM .Temperature dependence of photoluminescence of flat and undulated SiGe/Si multiple quantum wells ,INTERNATIONAL JOURNAL OF MODERN PHYSICS B,2002,16 (28-29):4211-4214
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