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题名: Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD
作者: Huang JS;  Dong X;  Luo XD;  Li DB;  Liu XL;  Xu ZY;  Ge WK
发表日期: 2003
摘要: AlxInyGa1-x-yN epilayers have been grown by metalorganic chemical vapor deposition (MOCVD) at different temperatures from 800 to 870degreesC. The incorporation of indium is found to increase with decreasing growth temperature, while the incorporation of Al remains nearly constant. The optical properties of the samples have been investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL) at different temperatures. The results show that the sample grown at 820 C exhibits the best optical quality for its large PL intensity and the absence of the yellow luminescence. Furthermore the temperature-dependent PL and TRPL of the sample reveals its less exciton localization effect caused by alloy fluctuations. In the scanning electron microscopy measurement, much uniform surface morphology is found for the sample grown at 820degreesC, in good agreement with the PL results, The improvement of AlxInyGa1-x-yN quality is well correlated with the incorporation of indium into AlGaN and the possible mechanism is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
KOS主题词: Surfaces;  X-ray crystallography;  Metal organic chemical vapor deposition;  Nitrides;  Quantum Well;  Luminescence;  Diodes
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Huang JS; Dong X; Luo XD; Li DB; Liu XL; Xu ZY; Ge WK .Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD ,JOURNAL OF CRYSTAL GROWTH,2003,247 (1-2):84-90
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