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题名: Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation
作者: Feng ZH;  Yang H;  Zheng XH;  Fu Y;  Sun YP;  Shen XM;  Wang YT
发表日期: 2003
摘要: The reduction of residual strain in cubic GaN growth by inserting a thermoannealing process is investigated. It is found that the epilayer with smaller tensile strain is subject to a wider optimal "growth window." Based on this process, we obtain the high-quality GaN film of pure cubic phase with the thickness of 4 mum by metalorganic chemical vapor deposition. The photoluminescence spectrum at room temperature shows the thick GaN layer has a near-band emission peak with a full width at half maximum of 42 meV which confirms its high crystal quality, further supported by the x-ray (002) diffraction measurement. A simplified model is demonstrated to interpret this strain effect on the growth process. (C) 2003 American Institute of Physics.
KOS主题词: Epitaxy;  Photography--Films;  Finite volume method;  Gallium arsenide
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Feng ZH; Yang H; Zheng XH; Fu Y; Sun YP; Shen XM; Wang YT .Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation ,APPLIED PHYSICS LETTERS,2003,82 (2):206-208
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