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题名: Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation
作者: Luo MC;  Li JM;  Wang QM;  Sun GS;  Wang L;  Li GR;  Zeng YP;  Lin LY
发表日期: 2003
摘要: The growth of SiC epilayers on C-face (0 0 0 1) sapphire (alpha-Al2O3) has been performed using CVD method. We found that the quality of SiC epilayers has been improved through the nitridation of substrates by exposing them to ammonia ambient, as compared to growth on bare sapphire substrates. The single crystallinity of these layers was verified by XRD and double crystal XRD measurements. Atomic force microscopy was used to evaluate the surface morphology. Infrared reflectivity and Raman scattering measurement were carried out to investigate the phonon modes in the grown SiC. Detailed Raman analysis identified the 6H nature of the as-grown SiC films. (C) 2002 Elsevier Science B.V. All rights reserved.
KOS主题词: Raman;  X-ray crystallography;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  SIC;  Photography--Films;  Finite volume method
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Luo MC; Li JM; Wang QM; Sun GS; Wang L; Li GR; Zeng YP; Lin LY .Epitaxial growth and characterization of SiC on C-plane sapphire substrates by ammonia nitridation ,JOURNAL OF CRYSTAL GROWTH,2003,249 (1-2):1-8
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