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题名: Study on the reverse characteristics of Ti/6H-SiC Schottky contacts
作者: Shang YC;  Liu ZL;  Wang SR
发表日期: 2003
摘要: The reverse I(V) measurement and analytic calculation of the electron transport across a Ti/6H-SiC Schottky barrier are presented. Based on the consideration of the barrier fluctuations and the barrier height shift caused by image charge and the applied voltage drop across Ti/SiC interfical layer, a comprehensive analytical model for the reverse tunneling current is developed using a WKB calculation of the tunneling probability through a reverse biased Schottky barrier. This model takes into account the main reverse conduction mechanism, such as field emission, thermionic field emission and thermionic emission. The fact that the simulated results are in good agreement with the experimental data indicates that the barrier height shift and barrier fluctuation can lead to reverse current densities orders of magnitude higher than that obtained from a simple theory. It is shown that the field and thermionic field emission processes, in which carries can tunnel through the barrier but cannot surmount it with insufficient thermal energy, dominate the reverse characteristics of a SiC Schottky contacts in a normal working condition.
KOS主题词: SIC;  Diodes, Schottky-barrier;  Tunneling current;  Electric field;  Diodes
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Shang YC; Liu ZL; Wang SR .Study on the reverse characteristics of Ti/6H-SiC Schottky contacts ,ACTA PHYSICA SINICA,2003,52 (1):211-216
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